Germany – Semiconductors – Cluster ALE/ICP/RIE + PECVD + ALD (HHI-07) - PR865241-3220-P

The required cluster tool should include a loadlock and a handler, three separate process chambers for ALE/ICP/RIE (Atomic Layer Etching/Inductively Coupled Plasma/Reactive Ion Etching), ALD (Atomic Layer Deposition), and ICP-PECVD (Inductively Coupled Plasma-Plasma Enhanced Chemical Vapor Deposition). After etching the InP, In(Al)GaAsP, and In(Al)GaAs layers on 3" to 6" wafers in the ALE/ICP/RIE chamber, these should be transferred under high vacuum to one of the coating chambers. The ALD chamber should allow for coating with SiNx, SiO2, Al2O3, and TiO2, while the ICP-PECVD chamber should support SiNx and SiO2.